China's ChangXin Memory Technologies (CXMT) announced mass production of its fifth-generation DRAM platform, called G5, at the World Manufacturing Convention in Hefei on September 20. The chipmaker says it reaches an 11.95-nanometer half-pitch in the memory array using quadruple patterning, and yields at least 50% more dies per wafer than its previous generation.

Two 24-gigabit LPDDR5X products for smartphones and portable devices are already in volume production. Each holds 50% more data than CXMT's earlier 16-gigabit parts. The company did not disclose yield or monthly output, and analysts caution that its 11.95nm figure cannot be compared directly with rivals' node naming.

CXMT held 9.5% of global DRAM revenue in the second quarter, fourth behind Samsung, SK hynix and Micron. Rising Chinese output is easing shortages of commodity memory, though high-speed LPDDR5 and DDR5 remain tight as AI demand grows.