ASML and TSMC announced a joint industry initiative on September 8 to move High NA EUV lithography from today's 6-inch photomasks to a new 12-inch format. The change targets a pilot production line for the larger masks by 2031, with full lithography-system readiness for advanced-node manufacturing by 2033.
High NA EUV raises the numerical aperture of extreme ultraviolet lithography from 0.33 to 0.55, letting chipmakers print smaller features with fewer costly multiple-patterning steps. TSMC plans to bring High NA into high-volume production starting in 2030, and says the number of layers needing the technology will keep growing as AI chips demand increasingly complex transistor architectures. Moving to 12-inch masks would remove the need to stitch together two 6-inch masks during High NA exposure, improving fab productivity and lowering manufacturing costs.
ASML and TSMC say other major equipment and materials suppliers have already expressed interest in joining the initiative, signaling broad industry backing for the multi-year transition.